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Product

Low-Side Driver

The non-isolated low-side driver of NOVOSENSE has the characteristics of low delay, strong driving ability and negative pressure resistance of input, which can reduce switching loss, improve the recovery ability of the system to noise and improve the system density, so as to achieve efficient and reliable system design.

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  • Drive Object
    GaNFET/MOSFET/IGBT
  • Peak Drive Current (A)
    5/-5
  • Output Channel
    2
  • VCC(Max)(V)
    4.5-24
  • Propagation Delay (Max) ton/o
    27/27
    70/70
  • Delay Matching (ns)
    4
  • Feature
    Enable and negative voltage handling on input (-10V)
    Input Deglitch, Enable, and negative voltage handling on input (-10V)
  • Operation Temperature (°C)
    -40~125
  • Qualification
    Industrial
    Automobile
  • Package
    SOP8
    EP-MSOP8
    EP-SOP8
    DFN8

show 6 devices

Part Number Drive Object Peak Drive Current (A) Output Channel VCC(Max)(V) Propagation Delay (Max) ton/o Delay Matching (ns) Feature Operation Temperature (°C) Qualification Package
NSD1026V-DSPR
GaNFET/MOSFET/IGBT
5/-5
2
30
27/27
4
Enable, Negative Voltage Handling on Input(-10V)
-40~125
Industrial
SOP8
NSD1026V-DHMSR
GaNFET/MOSFET/IGBT
5/-5
2
30
27/27
4
Enable, Negative Voltage Handling on Input(-10V)
-40~125
Industrial
EP-MSOP8
NSD1026V-DDAER
GaNFET/MOSFET/IGBT
5/-5
2
30
27/27
4
Enable, Negative Voltage Handling on Input(-10V)
-40~125
Industrial
DFN8
NSD1026V-Q1SPR
GaNFET/MOSFET/IGBT
5/-5
2
30
27/27
4
Enable, Negative Voltage Handling on Input(-10V)
-40~125
Automotive
SOP8
NSD1026V-Q1HSPR
GaNFET/MOSFET/IGBT
5/-5
2
30
27/27
4
Enable, Negative Voltage Handling on Input(-10V)
-40~125
Automotive
EP-SOP8
NSD1026V-Q1HMSR
GaNFET/MOSFET/IGBT
5/-5
2
30
27/27
4
Enable, Negative Voltage Handling on Input(-10V)
-40~125
Automotive
EP-MSOP8

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